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ON SEMICONDUCTOR MUR410G Fast / Ultrafast Diode, 100 V, 4 A, Single, 890 mV, 35 ns, 125 A Raynox HDP-7880ES Can Be Used with Infrared-Type

SKU 45274443508
4.1
USD73.07 USD119.07

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Ships within 48 hours · Estimated delivery Aug 10 - Aug 15

Description

Can Be Used with Infrared-Type Film

of Circuits 1Circuits Multiplexer Configuration 8:1 On State Resistance Max 6ohm Packaging Each MSL MSL 1 - Unlimited Other details

Brand NSF (CONTROLS) Part Number MU 454882FPA(MA) Quantity Each Technical Data Sheet EN

The rugged antenna is intended for use with Lectrosonics belt-pack transmitters and can be literally trimmed to length for operation on all common UHF frequencies

The Impact 7" Grid (30 Degree) helps you control your light more precisely: this honeycomb grid

ON SEMICONDUCTOR MUR410G Fast / Ultrafast Diode, 100 V, 4 A, Single, 890 mV, 35 ns, 125 A Raynox HDP-7880ES Can Be Used with Infrared-TypeThis is a Fast Ultrafast Diode, 100 V, 4 A, Single, 890 mV, 35 ns, 125 A product from ON SEMICONDUCTOR with the model number MUR410GProduct details Repetitive Reverse Voltage Vrrm Max 100V Forward Current If(AV) 4A Diode Configuration Single Forward Voltage VF Max 890mV Reverse Recovery Time trr Max 35ns Forward Surge Current Ifsm Max 125A Operating Temperature Max 175C Diode Case Style DO 201AD No. of Pins 2 Pin Packaging Each Product Range MUR41

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